BJT Transistor Bias Voltage Calculator

Enter value and click on calculate. Result will be displayed.

Enter your values:
Base Bias Type: Volts

Rb = Base Resistance
Vin = Input Voltage
Rc = Collector Resistance
Re = Emitter Resistance
Vs = Supply Voltage
Vc = Collector Voltage
Ve = Emitter Voltage
Vb = Base Voltage

Ic = Collector gain x Ib

Ve = IC x Re

Vb = Ve x Base to Emitter Drop

Vc = Vs - IC x Rc

If (Vc < Ve) then,

Vc = Ve

Vb = Ve + Base to Emitter Drop

Base Resistance (Rb): K Ohms
Input Voltage (Vin): Volts
Collector Resistance (Rc): K ohms
Emitter Resistance (Re): K ohms
Supply Voltage (Vs): Volts
Current gain:
Base to Emitter Drop: Volts
Collector Voltage (Vc): Volts
Emitter Voltage (Ve): Volts
Base Voltage (Vb): Volts
Collector Voltage (Ic): mA
Base Voltage (Ib): mA


A Bipolar Junction Transistor (BJT) was invented in December 1947 at the Bell Telephone Laboratories by John Bardeen and Walter Brattain under the direction of William Shockley.

A Bipolar Junction Transistor is a solid-state device in which the current flow between two terminals (the collector and the emitter) is controlled by the amount of current that flows through a third terminal (the base).

A Bipolar Junction Transistor can be used for analog circuits, especially for very-high-frequency applications, such as radio-frequency circuits for wireless systems. Bipolar transistors can be combined with MOSFETs in an integrated circuit by using a BiCMOS process to create innovative circuits that take advantage of the best characteristics of both types of transistor.